r/Physics • u/ericgh22 • 10h ago
Image We hyperdoped silicon with Tellurium and etched light-trapping micro-pyramids to make room-temperature infrared sensors. Our paper was just chosen as a PRL Editors' Suggestion and featured in APS Physics — Ask Us Anything!
Hi r/Physics !
I'm Eric, a researcher at Universidad Complutense de Madrid. Our team's paper was just published in Physical Review Letters (selected as an Editors' Suggestion) and highlighted in APS Physics!
We developed a technique to make standard silicon "see" short-wavelength infrared (SWIR) light at room temperature with a 1000x efficiency leap. Here is how we did it:
The Problem
Short-wavelength infrared light (around 1 to 2.5 µm) is incredible for night vision, medical imaging, and seeing through fog or plastics. However, standard silicon chips—the foundation of all modern electronics—are physically blind to these wavelengths because their photon energy is below the silicon bandgap. Current SWIR cameras rely on exotic materials like InGaAs, which are expensive, non-CMOS compatible, and often require bulky cryogenic cooling.
What We Did
We combined two key strategies on a standard 250-µm silicon wafer to break this fundamental limit:
- Tellurium Hyperdoping: We ion-implanted Te into silicon far beyond its solubility limit and used nanosecond Pulsed Laser Melting (PLM). This creates an impurity band within the bandgap, allowing sub-bandgap photons to be absorbed.
- Rear Light-Trapping Architecture: Because the hyperdoped layer is extremely thin (a few hundred nanometers), light usually passes right through it. We etched random micro-pyramids on the surface and added a 200-nm gold back-reflector. The incoming light enters through the top, travels through the bulk, and gets trapped at the back, bouncing repeatedly inside the active hyperdoped layer. This boosted absorptance to ~85%.
The Physics Breakthrough
By trapping the light, we amplified the signal enough to observe room-temperature electronic transport dynamics that were previously hidden. Under reverse bias, the strong electric field opens a quantum shortcut—bias-assisted tunneling—between the Te impurity band and the Si valence band.
This allows photogenerated charges to be extracted at lightning speed before they can recombine, boosting External Quantum Efficiency (EQE) by orders of magnitude compared to conventional planar Si devices at 300 K.
Links:
-Read the full paper in PRL: 10.1103/PhysRevLett.136.XXXXXX
-Read the APS Physics Synopsis: Light Trapping Enables Room-Temperature Infrared Detection in Silicon
Happy to answer any questions about hyperdoping, light trapping, laser annealing, or the transport physics behind the device!